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Ohmic contact formation of gallium nitride and electrical properties improvement

Aiman, Mohd Halil (2016) Ohmic contact formation of gallium nitride and electrical properties improvement. PhD thesis, Universiti Malaysia Pahang.

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Abstract

In this chapter, in order to improve the electrical conduction of Mg-doped p-type GaN contacts, enhancement of hydrogen release from GaN substrates is attempted. The electrical conduction profiles of the p-type GaN/Ni contact annealed at 573 K and 673 K for 3600 s while subjected to current flow show some improvement compared to the contact annealed without applying the current flow. From these results, it can be understood that by applying current flow through the GaN substrates during annealing process, hydrogen release form GaN substrates can be enhanced by even annealing at low temperature. To understand the mechanism of hydrogen release by applying current flow during annealing, the change in current values p-type GaN contacts during annealing has been observed. By using regression analysis and kinetic model, the electrical conduction improvement achieve by applying current flow through GaN substrate during annealing have been analysis. The results suggest that that by applying current flow during annealing and by forming a contact with material that H can diffuse into such as Pd, the H release from GaN substrate can be enhanced and the electrical conduction of p-type GaN contact can be significantly improved.

Item Type: Thesis (PhD)
Additional Information: Thesis (Doctor of Phillosophy) -- Osaka University - 2016
Uncontrolled Keywords: Gallium nitride; Electrical Properties
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Electrical & Electronic Engineering
Depositing User: Ms. Nor Suhadah Sabli
Date Deposited: 02 Mar 2017 07:46
Last Modified: 29 Aug 2018 02:14
URI: http://umpir.ump.edu.my/id/eprint/16957
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