Carbon nanotube field effect transistors: toward future nanoscale electronics

Obite, Felix and Ijeomah, Geoffrey and Bassi, Joseph Stephen (2018) Carbon nanotube field effect transistors: toward future nanoscale electronics. International Journal of Computers and Applications, 41 (2). pp. 149-164. ISSN 206-212X (Print); 1925-7074 (Online). (Published)

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As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effectively being examined in order to keep the scaling trend. Among these, carbon nanotubes (CNTs) have emerged as one of the most extensively studied materials due to their excellent performance properties such as minimal short channel effects, high mobility, and high normalized drive currents. CNTs are the backbone of carbon nanotube field effect transistor, which is considered as the most preferred candidate for the replacement of silicon transistors. Despite their practical significance, a well-organized framework, and consistent review are still lacking. To this end, this paper presents an intensive review in order to define the state of the art in this field from a fresh and unifying viewpoint while elucidating fruitful insights into recent advances and future trends. In particular, we review material properties and structures. Specifically, we emphasize on the most relevant device fabrication and current modeling concepts. Furthermore, we distill key insights into recent advances and challenges that may sustain or expand future applications. The future research directions are also carefully analyzed.

Item Type: Article
Uncontrolled Keywords: Carbon nanotube; field effect transistors; nanoscale electronics; silicon MOSFET
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Electrical & Electronic Engineering
Depositing User: Mrs. Neng Sury Sulaiman
Date Deposited: 18 Feb 2019 04:15
Last Modified: 18 Feb 2019 04:15
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