Nuraini, Abdullah and Noor Mazni, Ismail and Nuruzzaman, D. M. (2018) Preparation of tin oxide (SnO2) thin films using thermal oxidation. In: 4th Asia Pacific Conference on Manufacturing Systems and the 3rd International Manufacturing Engineering Conference, APCOMS-iMEC 2017 , 7-8 December 2017 , Yogyakarta, Indonesia. pp. 1-6., 319 (1). ISSN 1757-8981 (Print); 1757-899X (Online)
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Abstract
The present research study deals with the preparation of tin oxide (SnO2) nanostructures using thermal oxidation method. At first, Sn thin film was deposited on silicon (Si) substrate by thermal evaporation and then, thermal oxidation of the deposited Sn thin film was carried out at the growth temperature of 100°C with growth time of 1 hour in tube furnace. The structural property of SnO2nanostructures was investigated by using FESEM and EDX. The FESEM results showed that Sn was successfully grown on Si substrate and the SnO2 nanoparticles with diameters of 97.5nm to 142nm were recorded. It was observed that the particles were agglomerated to form the SnO2 particles. The radiation of sunlight illumination was conducted for four consecutive sunny days and the results showed that the highest reading 189.9 W/m2 was recorded at day two for the daytime temperature 38°C. It was also noticed that the highest solar radiation percentage at day two was measured 18.9%.
| Item Type: | Conference or Workshop Item (Lecture) |
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| Additional Information: | Indexed by SCOPUS |
| Uncontrolled Keywords: | Film growth; Nanostructures; Oxide films; Substrates; Thermal evaporation |
| Subjects: | T Technology > TS Manufactures |
| Faculty/Division: | Faculty of Manufacturing Engineering |
| Depositing User: | Mrs. Neng Sury Sulaiman |
| Date Deposited: | 17 May 2019 03:33 |
| Last Modified: | 14 Sep 2022 02:59 |
| URI: | http://umpir.ump.edu.my/id/eprint/23777 |
| Download Statistic: | View Download Statistics |
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