A new factor for fabrication technologies evaluation for silicon nanowire transistors

Hashim, Yasir and Shakib, Mohammed Nazmus (2020) A new factor for fabrication technologies evaluation for silicon nanowire transistors. A new factor for fabrication technologies evaluation for silicon nanowire transistors, 18 (5). pp. 2597-2605. ISSN 1693-6930. (Published)

[img]
Preview
Pdf
12121-46543-1-PB.pdf

Download (682kB) | Preview

Abstract

This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography.

Item Type: Article
Uncontrolled Keywords: AFM; IC; Nanolithography; SiNWT; Transistor
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Electrical and Electronic Engineering Technology
Depositing User: Dr. Mohammed Nazmus Shakib
Date Deposited: 10 Dec 2020 03:25
Last Modified: 11 Dec 2020 06:53
URI: http://umpir.ump.edu.my/id/eprint/30136
Download Statistic: View Download Statistics

Actions (login required)

View Item View Item