The Electrical Conductivity of Copper (I) iodide (CuI) Thin Films Prepared by Mister Atomizer

Amalina, M. N. and Ayib Rosdi, Zainun and N. A., Rasheid and Rusop, M. (2012) The Electrical Conductivity of Copper (I) iodide (CuI) Thin Films Prepared by Mister Atomizer. In: 10th IEEE International Conference on Semiconductor Electronics (ICSE 2012) , 19-21 September 2012 , Kuala Lumpur, Malaysia. pp. 128-131.. ISBN 978-1-4673-2394-9

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In this paper, the copper (1) iodide (CuI) thin films were prepared by mister atomizer with different thickness. The effect of thickness of CuI thin films were done by varying the deposition flow rate and deposition time. The effects of thickness to its structural, electrical and optical properties were studied. The resistivity increases as the thickness of thin film increase with highest resistivity of 4.79 x 101 ȍ cm. The transmittance for most of the samples was transparent of above 80% in the visible wavelength. The transmittance and absorption coefficient was measured and then the energy gap was determined which shows the direct transition of n=2. The maximum band gap observed here is 2.82 eV for the thickest thin films. The observation on effect of thickness in this study shows that the increasing of thin film thickness increased the resistivity while the absorption coefficient decrease with slight rise of band gap w

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Copper (I) Iodide; Mister Atomizer; Flow Rate; Electrical Properties; Optical Properties
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Electrical & Electronic Engineering
Depositing User: Ms. Hazima Anuar
Date Deposited: 05 May 2016 07:05
Last Modified: 15 Jan 2018 07:45
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