Correlation Between the Microstructure of Copper Oxide Thin Film and Its Gas Sensing Response

Ahmad Faizal, Mohd Zain and Jia, Wei Low and Nafarizal, Nayan and Mohd Zainizan, Sahdan and Mohd Khairul, Ahmad and Ali Yeon, Md Shakaff and Ammar, Zakaria (2014) Correlation Between the Microstructure of Copper Oxide Thin Film and Its Gas Sensing Response. In: Proceedings of the IEEE International Conference on Semiconductor Electronics (ICSE 2014)) , 27-29 August 2014 , Kuala Lumpur. pp. 32-35..

[img] PDF
Correlation_between_the_microstructure_of_copper_oxide_thin_film_and_its_gas_sensing_response.pdf - Published Version
Restricted to Repository staff only

Download (542kB) | Request a copy


Copper oxide gas sensor was prepared on silicon wafer by sputtering of copper target at different oxygen flow rate of 0, 4, 8 and 16 sccm using RF magnetron sputtering technique. Argon flow rate, RF power, working pressure and substrate bias voltage were fixed at 50 sccm, 400 W, 22.5 mTorr and −40 V, respectively. The effect of varying the oxygen flow rate towards the time response of the copper oxide gas sensor was investigated. In addition, the influence of the copper oxide thin films microstructure and I-V characteristic was also considered. Based on the result, copper oxide gas sensor fabricated at 8 sccm of oxygen flow rate provide a better response of 0.024V/s compare to those fabricated at 0, 4 and 16 sccm.

Item Type: Conference or Workshop Item (Speech)
Additional Information: Publisher: IEEE Xplore
Uncontrolled Keywords: Sputtering; Thin films; Copper oxide; Gas sensor
Subjects: T Technology > TS Manufactures
Faculty/Division: Faculty of Manufacturing Engineering
Depositing User: Mrs. Neng Sury Sulaiman
Date Deposited: 29 Oct 2014 06:17
Last Modified: 20 Apr 2016 01:23
Download Statistic: View Download Statistics

Actions (login required)

View Item View Item