Agha, Firas Natheer Abdul-kadir and Hashim, Yasir and Shakib, Mohammed Nazmus (2020) Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET. In: IEEE International Conference on Semiconductor Electronics (ICSE) , 28-29 July, 2020 , Kuala Lumpur, Malaysia. pp. 1-4.. ISBN 978-1-7281-5968-3 (Published)
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Abstract
This research paper presents the effect of
working temperature on the ION, IOFF and ION/IOFF ratio of gate
all around nanowire TFET. The (Silvaco) simulation tool has
been used to investigate the temperature characteristics of a
transistor. The working temperature range of this study is
from -50 to 150 step-up 25 oC. The final results indicate that
the negative effects of increasing working temperature of gate
all around nanowire TFET due to decreasing of the ION/IOFF
ratio. Hence, the results for ION/IOFF ratio vs. working
temperature characteristics may lead to the use of TFET in
electronic circuits with lowest possible working temperature to
obtain higher ION/IOFF ratio.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Nanowire; Transistor; Temperature; TFET; OFF; ON |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Faculty/Division: | Faculty of Electrical and Electronic Engineering Technology |
| Depositing User: | Dr. Mohammed Nazmus Shakib |
| Date Deposited: | 10 Dec 2020 08:09 |
| Last Modified: | 10 Dec 2020 08:09 |
| URI: | https://umpir.ump.edu.my/id/eprint/30155 |
| Statistic Details: | View Download Statistic |
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