A New Simulation Model for Nanowire-CMOS Inverter Circuit

Naif, Yasir Hashim (2016) A New Simulation Model for Nanowire-CMOS Inverter Circuit. In: The 2016 International Conference on Advanced Informatics: Concepts, Theory and Application (ICAIATA 2016) , 16-19 August 2016 , Penang, Malaysia. pp. 1-6.. ISBN 978-1-5090-1636-5

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Abstract

This This paper is to suggest a new model for predicting the static characteristics of nanowire-CMOS (NW-CMOS) inverter. This model depends on experimental (or simulated) output characteristics of load and driver transistors separately as an input data. This model used in this research to investigate the effect of length (L), oxide thickness (Tox) and numbers of nanowires in P and N-channel SiNWT on the NW-CMOS inverter output and current characteristics. This study used MuGFET simulation tool to produce the output Characteristics of SiNWT which used as input to a designee MATLAB software to calculate the characteristics of NW-CMOS. The output (Vout-Vin) and current (Iout-Vin) characteristics that calculated shows excellent behaviors for digital applications.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	CMOS, nanowire, transistor, inverter
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division:	Faculty of Engineering Technology
Depositing User:	Dr. Yasir Hashim Naif
Date Deposited:	22 Nov 2016 04:23
Last Modified:	22 Aug 2017 06:52
URI:	http://umpir.ump.edu.my/id/eprint/14448
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