Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor

Hashim, Yasir (2018) Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor. Journal of Nanoscience and Nanotechnology, 18 (2). pp. 1199-1201. ISSN 1533-4880 (Print); 1533-4899 (Online). (Published)

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DOI/Official URL: https://doi.org/10.1166/jnn.2018.13956

Abstract

This study explores optimization of resistance load (R-Load) of four silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell. Noise margins and inflection voltage of butterfly characteristics with static power consumption of SRAM cell are used as limiting factors in this optimization. Range of R-Load used in this study was 20–1000 KΩ with V dd= 1 V. Results indicate that optimization depends critically on resistance load value. The optimized range of R-Load is 100–200 KΩ.

Item Type:	Article
Uncontrolled Keywords:	4T-SRAM; CMOS; Digital Inverter; Nanowire; R-Load; SiNWT
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division:	Faculty of Engineering Technology
Depositing User:	Dr. Yasir Hashim Naif
Date Deposited:	07 Dec 2017 00:49
Last Modified:	07 Mar 2018 07:05
URI:	http://umpir.ump.edu.my/id/eprint/19249
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