Temperature Effect on ON/OFF Current Ratio of FinFET Transistor

Hashim, Yasir (2017) Temperature Effect on ON/OFF Current Ratio of FinFET Transistor. In: 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) , 23-25 August 2017 , Batu Ferringhi, Malaysia. pp. 231-234. (172623). ISBN 978-1-5090-4029-2

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Abstract

This paper demonstrates the working temperature effect on ON/OFF current ratio of FinFET transistor and the prospect of using it as a temperature nano-sensor. The characteristics of the FinFET transistors were simulated using MUGFET simulation tool at different working temperature. Output characteristics with a working temperature range (-25oC to 125oC) were simulated. Variation of ON current to OFF current ratio (Ion/Ioff) with working temperature was investigated.

Item Type:	Conference or Workshop Item (Lecture)
Uncontrolled Keywords:	Temperature, FinFETs, Silicon, Tools, Temperature sensors, Ions
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division:	Faculty of Engineering Technology
Depositing User:	Dr. Yasir Hashim Naif
Date Deposited:	07 Dec 2017 00:58
Last Modified:	07 Dec 2017 00:58
URI:	http://umpir.ump.edu.my/id/eprint/19250
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