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Temperature Effect on ON/OFF Current Ratio of FinFET Transistor

Hashim, Yasir (2017) Temperature Effect on ON/OFF Current Ratio of FinFET Transistor. In: 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 23-25 August 2017 , Batu Ferringhi, Malaysia. pp. 231-234. (172623). ISBN 978-1-5090-4029-2

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Abstract

This paper demonstrates the working temperature effect on ON/OFF current ratio of FinFET transistor and the prospect of using it as a temperature nano-sensor. The characteristics of the FinFET transistors were simulated using MUGFET simulation tool at different working temperature. Output characteristics with a working temperature range (-25oC to 125oC) were simulated. Variation of ON current to OFF current ratio (Ion/Ioff) with working temperature was investigated.

Item Type: Conference or Workshop Item (Lecture)
Uncontrolled Keywords: Temperature, FinFETs, Silicon, Tools, Temperature sensors, Ions
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Engineering Technology
Depositing User: Dr. Yasir Hashim Naif
Date Deposited: 07 Dec 2017 00:58
Last Modified: 07 Dec 2017 00:58
URI: http://umpir.ump.edu.my/id/eprint/19250
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