Hashim, Yasir (2017) Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type. In: IOP Conference Series: Materials Science and Engineering, International Research and Innovation Summit (IRIS2017) , 6-7 May 2017 , Melaka, Malaysia. pp. 1-6., 226 (012123). ISSN 1757-899X
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Abstract
This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C.
| Item Type: | Conference or Workshop Item (Lecture) |
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| Uncontrolled Keywords: | FinFET; transistor; nano-sensor |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Faculty/Division: | Faculty of Engineering Technology |
| Depositing User: | Dr. Yasir Hashim Naif |
| Date Deposited: | 07 Dec 2017 02:31 |
| Last Modified: | 07 Dec 2017 02:31 |
| URI: | http://umpir.ump.edu.my/id/eprint/19252 |
| Download Statistic: | View Download Statistics |
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