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Hashim_2017_IOP_Conf._Ser.%3A_Mater._Sci._Eng._226_012123.pdf Available under License Creative Commons Attribution. Download (686kB) | Preview |
DOI/Official URL: http://dx.doi.org/10.1088/1757-899X/226/1/012123
Abstract
This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C.
Item Type: | Conference or Workshop Item (Lecture) |
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Uncontrolled Keywords: | FinFET; transistor; nano-sensor |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Faculty/Division: | Faculty of Engineering Technology |
Depositing User: | Dr. Yasir Hashim Naif |
Date Deposited: | 07 Dec 2017 02:31 |
Last Modified: | 07 Dec 2017 02:31 |
URI: | http://umpir.ump.edu.my/id/eprint/19252 |
Download Statistic: | View Download Statistics |
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