Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type

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Abstract

This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C.

Item Type:	Conference or Workshop Item (Lecture)
Uncontrolled Keywords:	FinFET; transistor; nano-sensor
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division:	Faculty of Engineering Technology
Depositing User:	Dr. Yasir Hashim Naif
Date Deposited:	07 Dec 2017 02:31
Last Modified:	07 Dec 2017 02:31
URI:	http://umpir.ump.edu.my/id/eprint/19252
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