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Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type

Hashim, Yasir (2017) Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type. In: IOP Conference Series: Materials Science and Engineering, International Research and Innovation Summit (IRIS2017), 6-7 May 2017 , Melaka, Malaysia. pp. 1-6., 226 (012123). ISSN 1757-899X

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Abstract

This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C.

Item Type: Conference or Workshop Item (Lecture)
Uncontrolled Keywords: FinFET; transistor; nano-sensor
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Engineering Technology
Depositing User: Dr. Yasir Hashim Naif
Date Deposited: 07 Dec 2017 02:31
Last Modified: 07 Dec 2017 02:31
URI: http://umpir.ump.edu.my/id/eprint/19252
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