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Studies on correlation between electronic structure and electronic conductivity in MoX2 (X = S, Se and Te)

Muhamad Haikal Hazazi, Mohd Rusland (2016) Studies on correlation between electronic structure and electronic conductivity in MoX2 (X = S, Se and Te). Faculty of Industrial Sciences and Technology, Universiti Malaysia Pahang.

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Abstract

A successful research have been conducted to investigate the molybdenum dichalcogenides, MoX2 (X = S, Se, and Te) as the electrode materials in electrochemical cells. The relationship between number of layer and bandgap of the materials has been studied by many researcher in the past. They hardly stated that, the properties such as speed of storage and amount of chargers that could be stored within the cells will be answered as soon as the correlation been studied. In this study, fundamental parameters such as size-offset between a monolayer and exciton Bohr radius of MoX2 and ground and excited state electron density have been investigate. In this study also, realistic monolayer models of MoX2 were identified using quantum chemical calculations which also explain a correlation between size-offset and charge storage properties. We conclude that as the size-offset decreases, the higher possibility of wave functions overlap between the excited state, and ground state electrons; therefore the higher the electron mobility, and conductivity of the MoX2 would be.

Item Type: Undergraduates Project Papers
Additional Information: Project Paper (Bachelor of Applied Science (Honor) Material Technology) -- Universiti Malaysia Pahang – 2017, SV: DR. SAIFFUL KAMALUDDIN BIN MUZAKIR, NO. CD: 10879
Uncontrolled Keywords: Electronic structure; electronic conductivity
Subjects: T Technology > T Technology (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Industrial Sciences And Technology
Depositing User: Mrs. Sufarini Mohd Sudin
Date Deposited: 12 Mar 2018 03:04
Last Modified: 12 Mar 2018 03:04
URI: http://umpir.ump.edu.my/id/eprint/19943
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