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Optimal nano dimensional channel of GaAs-FinFET transistor

Ahmed, Mahmood and Waheb Abdul Jabbar, Shaif Abdullah and Wasan Kadhim, Saad and Hadi, Manap (2018) Optimal nano dimensional channel of GaAs-FinFET transistor. In: 2018 IEEE 16th Student Conference On Research And Development (Scored), Bangi, Malaysia (26-28 Nov 2018), 26 - 28 Nov 2018 , Bangi Resort, Bangi, Selangor, Malaysia. pp. 1-5.. ISBN 978-153869175-5

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Abstract

This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (I ON /I OFF , SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest I ON /I OFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm.

Item Type: Conference or Workshop Item (Lecture)
Additional Information: Indexed by Scopus
Uncontrolled Keywords: FinFET; ION/IOFF ratio; Subthreshold swing
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
T Technology > T Technology (General)
Faculty/Division: Faculty of Engineering Technology
Depositing User: Pn. Hazlinda Abd Rahman
Date Deposited: 12 Nov 2019 03:01
Last Modified: 12 Nov 2019 03:01
URI: http://umpir.ump.edu.my/id/eprint/25345
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