Mahmood, Ahmed and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor. International Journal of Electrical and Computer Engineering (IJECE), 9 (4). pp. 2902-2909. ISSN 2088-8708. (Published)
|
Pdf
Effects of downscaling channel dimensions on electrical.pdf Available under License Creative Commons Attribution Non-commercial. Download (781kB) | Preview |
Abstract
In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).
| Item Type: | Article |
|---|---|
| Additional Information: | Indexed by SCOPUS |
| Uncontrolled Keywords: | Channel dimensions; InAs- FinFET; ION/IOFF ratio; MuGFET; Subthreshold swing, |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Faculty/Division: | Faculty of Engineering Technology |
| Depositing User: | Noorul Farina Arifin |
| Date Deposited: | 16 Aug 2019 07:45 |
| Last Modified: | 16 Aug 2019 07:49 |
| URI: | http://umpir.ump.edu.my/id/eprint/25655 |
| Download Statistic: | View Download Statistics |
Actions (login required)
 |
View Item |