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Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

Mahmood, Ahmed and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor. International Journal of Electrical and Computer Engineering (IJECE), 9 (4). pp. 2902-2909. ISSN 2088-8708

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Abstract

In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).

Item Type: Article
Additional Information: Indexed by SCOPUS
Uncontrolled Keywords: Channel dimensions; InAs- FinFET; ION/IOFF ratio; MuGFET; Subthreshold swing,
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Engineering Technology
Depositing User: Noorul Farina Arifin
Date Deposited: 16 Aug 2019 07:45
Last Modified: 16 Aug 2019 07:49
URI: http://umpir.ump.edu.my/id/eprint/25655
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