Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT

AlAriqi, Hani Taha and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2020) Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT. International Journal of Computing and Digital Systems, 9 (1). pp. 87-95. ISSN 2210-142X. (Published)

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This paper investigates the temperature sensitivity and electrical characteristics of Silicon Nanowire Transistor (SiNWT) and Germanium Nanowire Transistor (GeNWT) depending on variable channel length (Lg). It also studies the possibility of using them as a temperature nanosensor. The MuGFET simulation tool was exploited to investigate the characteristics of the considered nanowire transistors. Current-voltage characteristics with different values of temperature with channel length [Lg = 25, 45, 65, 85 and 105 nanometer (nm)], were simulated. MOS diode mode connection suggested measuring the temperature sensitivity of SiNWT and GeNWT too. Three (3) electrical characteristics namely; (i) Subthreshold Swing (SS), (ii) Threshold voltage (VT), and (iii) Drain-induced barrier lowering (DIBL) were evaluated and compared for both NWTs. The obtained results show that SiNWT achieved a better temperature sensitivity with channel length range between 25 nm to 105 nm at operation voltage (VDD) range 1 V to 5 V nm. It is very clear that the temperature sensitivity increased remarkably by increasing channel length for both of SiNWT and GeNWT as well, but in SiNWT the sensitivity is more steady compared to GeNWT that showing less sensitivity. Moreover, SiNWT shows better result in terms of electrical performance metrics for various channel length at T = 300 K comparing with GeNWT.

Item Type: Article
Additional Information: Indexed By SCOPUS
Uncontrolled Keywords: SiNWTs; GeNWT; Channel length; Temperature sensitivity; Electrical characteristics
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Centre of Excellence: IBM Centre of Excellence
Institute of Postgraduate Studies
Faculty of Electrical and Electronic Engineering Technology
Depositing User: Noorul Farina Arifin
Date Deposited: 03 Jan 2020 02:54
Last Modified: 03 Jan 2020 02:54
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