Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

Abdul-Kadir, Firas Natheer and Hashim, Yasir and Shakib, Mohammed Nazmus and Taha, Faris Hassan (2021) Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling. International Journal of Electrical and Computer Engineering (IJECE), 11 (1). pp. 780-787. ISSN 2088-8708. (Published)


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This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.

Item Type: Article
Uncontrolled Keywords: Downscaling; GAA; Nanowire; Sub-threshold swing; TFET
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Electrical and Electronic Engineering Technology
Depositing User: Dr. Mohammed Nazmus Shakib
Date Deposited: 11 Dec 2020 03:28
Last Modified: 11 Dec 2020 03:28
URI: http://umpir.ump.edu.my/id/eprint/30151
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