Temperature characteristics of Gate all around nanowire channel Si-TFET

Agha, Firas Natheer Abdul-kadir and Hashim, Yasir and Jabbar, Waheb A. (2021) Temperature characteristics of Gate all around nanowire channel Si-TFET. In: Journal of Physics: Conference Series; 5th International Conference on Electronic Design, ICED 2020, 19 August 2020 , Perlis, Virtual. pp. 1-8., 1755 (1). ISBN 1742-6588

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This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been used to investigate the working temperature on the Si-TFET characteristics. The temperature range in this study is from -25 to 150°C. The results indicate that the TFET must work in electronic circuits with the lower temperature as possible to get better performances. Furthermore, the TFET has good performances as a temperature nanosensor with diode connection mode under ON conditions.

Item Type: Conference or Workshop Item (Lecture)
Additional Information: Indexed by Scopus
Uncontrolled Keywords: Connection mode; Drain-induced barrier lowering; Electrical characteristic; Lower temperatures; Sub-threshold swing(ss); Temperature characteristic; Temperature range; Working temperatures
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Electrical and Electronic Engineering Technology
Depositing User: Mrs Norsaini Abdul Samat
Date Deposited: 10 Feb 2022 02:12
Last Modified: 10 Feb 2022 02:12
URI: http://umpir.ump.edu.my/id/eprint/32198
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