Agha, Firas Natheer Abdul-kadir and Hashim, Yasir and Jabbar, Waheb A. (2021) Temperature characteristics of Gate all around nanowire channel Si-TFET. In: Journal of Physics: Conference Series; 5th International Conference on Electronic Design, ICED 2020 , 19 August 2020 , Perlis, Virtual. pp. 1-8., 1755 (1). ISBN 1742-6588
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Abstract
This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS). The (Silvaco) simulation tool has been used to investigate the working temperature on the Si-TFET characteristics. The temperature range in this study is from -25 to 150°C. The results indicate that the TFET must work in electronic circuits with the lower temperature as possible to get better performances. Furthermore, the TFET has good performances as a temperature nanosensor with diode connection mode under ON conditions.
| Item Type: | Conference or Workshop Item (Lecture) |
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| Additional Information: | Indexed by Scopus |
| Uncontrolled Keywords: | Connection mode; Drain-induced barrier lowering; Electrical characteristic; Lower temperatures; Sub-threshold swing(ss); Temperature characteristic; Temperature range; Working temperatures |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Faculty/Division: | Faculty of Electrical and Electronic Engineering Technology |
| Depositing User: | Mrs Norsaini Abdul Samat |
| Date Deposited: | 10 Feb 2022 02:12 |
| Last Modified: | 10 Feb 2022 02:12 |
| URI: | http://umpir.ump.edu.my/id/eprint/32198 |
| Download Statistic: | View Download Statistics |
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