Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism

Nurul Aliyah, Zainal Abidin and Faiz, Arith and Ahmad Syahiman, Mohd Shah and Sami, Ramadan and Ahmad Nizamuddin, Muhammad Mustafa and Nur Ezyanie, Safie and Mohd Asyadi, Azam and Marzaini, Rashid and Chelvanathan, Puvaneswaran (2025) Compressive strain of la induced in ZnO nanorods by interstitial site passivation for enhanced charge carrier transport mechanism. Crystal Growth and Design, 25 (12). pp. 4126-4139. ISSN 1528-7483. (Published)

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Abstract

Zinc oxide (ZnO) nanorods (NRs) doped with lanthanum (La) were synthesized via a low-temperature 90 °C hydrothermal method to investigate defect passivation and charge transport enhancement. Structural and spectroscopic characterization reveals that La3+ preferentially adsorbs at ZnO surfaces and grain boundaries, inducing compressive strain that suppresses defect formation without lattice substitution. Morphological studies demonstrate improved surface uniformity in La-doped NRs, while Raman spectroscopy shows reduced defect-related modes at 1 mol % La doping. XPS analysis confirms interfacial La3+ localization through characteristic 3.5 eV satellite features and minimal binding energy shifts of merely 0.2 eV. The optimal 1 mol % La-doped ZnO exhibits a conductivity of 5.46 S/m at 3.25 eV bandgap with a 4.6% improvement over high-temperature (>300 °C) synthesized La-ZnO references. While pristine ZnO shows higher absolute conductivity, these results demonstrate that low-temperature hydrothermal processing can achieve comparable electronic property enhancement to conventional high-temperature methods. This work provides fundamental insights into interfacial doping strategies for ZnO-based materials, with potential implications for optoelectronic applications.

Item Type: Article
Additional Information: Indexed by Scopus
Uncontrolled Keywords: Binding energy; Carrier transport; Grain boundaries; Lanthanum; Lanthanum compounds; Nanorods; Passivation; Surface defects; Temperature; Zinc oxide
Subjects: Q Science > QC Physics
T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty/Division: Faculty of Electrical and Electronic Engineering Technology
Depositing User: Mrs. Nurul Hamira Abd Razak
Date Deposited: 18 Jul 2025 07:50
Last Modified: 18 Jul 2025 07:50
URI: http://umpir.ump.edu.my/id/eprint/45119
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