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Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor

Mahmood, Ahmed and Jabbar, Waheb A. and Saad, Wasan Kadhim and Hashim, Yasir and Hadi, Manap (2018) Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor. In: IEEE Student Conference on Research and Development (SCOReD 2019), 26-28 November 2018 , Selangor, Malaysia. pp. 1-5.. ISBN 978-1-5386-9175-5

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This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (I ON /I OFF , SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest I ON /I OFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm.

Item Type: Conference or Workshop Item (Lecture)
Additional Information: Indexed by SCOPUS
Uncontrolled Keywords: FinFET; ION/IOFF ratio; subthreshold swing
Subjects: T Technology > T Technology (General)
Faculty/Division: Faculty of Engineering Technology
Depositing User: Noorul Farina Arifin
Date Deposited: 18 Jun 2019 01:56
Last Modified: 18 Jun 2019 01:58
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