Nurul Aliyah, Zainal Abidin and Faiz, Arith and Nur Syamimi, Noorasid and Hafez, Sarkawi and Ahmad Nizamuddin, Muhammad Mustafa and Nur Ezyanie, Safie and Ahmad Syahiman, Mohd Shah and Mohd Asyadi, Azam and Chelvanathan, Puvaneswaran and Amin, Nowshad (2023) Dopant engineering for ZnO electron transport layer towards efficient perovskite solar cells. RSC Advances, 13 (48). pp. 33797-33819. ISSN 2046-2069. (Published)
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Abstract
The conventional electron transport layer (ETL) TiO2 has been widely used in perovskite solar cells (PSCs), which have produced exceptional power conversion efficiencies (PCE), allowing the technology to be highly regarded and propitious. Nevertheless, the recent high demand for energy harvesters in wearable electronics, aerospace, and building integration has led to the need for flexible solar cells. However, the conventional TiO2 ETL layer is less preferred, where a crystallization process at a temperature as high as 450 °C is required, which degrades the plastic substrate. Zinc oxide nanorods (ZnO NRs) as a simple and low-cost fabrication material may fulfil the need as an ETL, but they still suffer from low PCE due to atomic defect vacancy. To delve into the issue, several dopants have been reviewed as an additive to passivate or substitute the Zn2+ vacancies, thus enhancing the charge transport mechanism. This work thereby unravels and provides a clear insight into dopant engineering in ZnO NRs ETL for PSC.
| Item Type: | Article |
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| Additional Information: | Indexed by Scopus |
| Uncontrolled Keywords: | Solar cell; Grain boundary; Perovskite |
| Subjects: | T Technology > T Technology (General) T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Faculty/Division: | Faculty of Electrical and Electronic Engineering Technology |
| Depositing User: | Mr Muhamad Firdaus Janih@Jaini |
| Date Deposited: | 30 Aug 2024 00:05 |
| Last Modified: | 05 Sep 2024 07:46 |
| URI: | http://umpir.ump.edu.my/id/eprint/41797 |
| Download Statistic: | View Download Statistics |
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